MRF1507/M1507 RF Power Field Effect Transistor
MRF1507/M1507 RF Power Field Effect Transistor
LATERAL NCHANNEL BROADBAND RF POWER MOSFET
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 volt portable FM equipment.
• Specified Performance @ 520 MHz, 7.5 Volts
Output Power — 8 Watts
Power Gain — 10 dB
Efficiency — 65%
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Excellent Thermal Stability
• Capable of Handling 20:1 VSWR, @ 9.5 Vdc, 520 MHz, 2 dB Overdrive
• Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request
• RF Power Plastic Surface Mount Package
• Available in Tape and Reel by Adding T1 Suffix to Part Number. T1 Suffix = 1,000 Units per 12 mm, 7 Inch R
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